Gate pulsed readout of floating gate fet gas sensors
نویسندگان
چکیده
منابع مشابه
Representation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET
In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperatu...
متن کاملRepresentation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET
In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperatu...
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In this paper, we propose and validate a novel design for a double-gate tunnel fi eld-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the fi rst time, DG Tunnel FET devices, which are using a high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current...
متن کاملrepresentation of the temperature nano-sensors via cylindrical gate-all-around si-nw-fet
in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...
متن کاملFloating-Gate UVMOS inverter
The supply and threshold voltage scaling has been proposed for low-voltage/low-power design [1, 2, 3]. The programmable floating-gate circuits [3, 4] can be used to implement low-voltage/low-power digital circuits. The threshold voltages are shifted using reversed supply voltages and UV-light. The supply voltage may be reduced and the current level is determined by the threshold shift. Before t...
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ژورنال
عنوان ژورنال: Procedia Engineering
سال: 2010
ISSN: 1877-7058
DOI: 10.1016/j.proeng.2010.09.036